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PDF DMP1022UFDE Data sheet ( Hoja de datos )
| Número de pieza | DMP1022UFDE | |
| Descripción | 12V P-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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DMP1022UFDE
12V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-12V
RDS(ON) max
16mΩ @ VGS = -4.5V
21.5mΩ @ VGS = -2.5V
26mΩ @ VGS = -1.8V
32mΩ @ VGS = -1.5V
ID max
TA = 25°C
-9.1A
-7.9A
-7.0A
-6.3A
Description
This MOSFET has been designed specifically for use in battery
management applications.
Pin1
U-DFN2020-6
Type E
ESD PROTECTED
Bottom View
Features
• 0.6mm profile – ideal for low profile applications
• PCB footprint of 4mm2
• Low Gate Threshold Voltage
• Fast Switching Speed
• ESD Protected to 3KV
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: U-DFN2020-6 Type E
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.0065 grams (approximate)
Drain
6D D1
5D D2
4S S G3
Pin Out
Bottom View
Gate
Gate
Protection
Diode
Source
Internal Schematic
Ordering Information (Note 4)
Part Number
DMP1022UFDE-7
Marking
P4
Reel size (inches)
7
Quantity per reel
3,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
DMP1022UFDE
Datasheet number: DS35477 Rev. 9 - 2
P4 = Product Type Marking Code
P4
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
1 of 7
www.diodes.com
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
July 2012
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/
1 page  
DMP1022UFDE
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
4,000
3,500
f = 1MHz
3,000
2,500
Ciss
2,000
1,500
1,000
500
0
0
8
Coss
Crss
3 6 9 12
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Junction Capacitance
15
6
20
16
12
8
4
0
0.4 0.6
0.8 1.0 1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Diode Forward Voltage vs. Current
100,000
10,000
TA = 150°C
TA = 125°C
1,000
TA = 85°C
TA = 25°C
100
0 2 4 6 8 10 12
-VDS, DRAIN-SOURCE VOLTAGE(V)
Fig. 13 Typical Drain-Source Leakage Current vs. Voltage
4
2
0
0 5 10 15 20 25 30 35 40 45 50
Qg, TOTAL GATE CHARGE (nC)
Fig. 14 Gate-Charge Characteristics
DMP1022UFDE
Datasheet number: DS35477 Rev. 9 - 2
5 of 7
www.diodes.com
July 2012
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
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