PDF DMN32D2LDF Data sheet ( Hoja de datos )

Número de pieza	DMN32D2LDF
Descripción	COMMON SOURCE DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Fabricantes	Diodes
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No Preview Available ! Features • Common Source Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.2V max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Small Surface Mount Package • ESD Protected Gate • Lead Free By Design/RoHS Compliant (Note 2) • "Green" Device (Note 3) • Qualified to AEC-Q 101 Standards for High Reliability DMN32D2LDF COMMON SOURCE DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Mechanical Data • Case: SOT-353 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminal Connections: See Diagram • Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.006 grams (approximate) SOT-353 G2 S G1 G2 S G1 Q1 Q2 ESD PROTECTED TOP VIEW BOTTOM VIEW Maximum Ratings Q1, Q2 @TA = 25°C unless otherwise specified D2 D1 TOP VIEW Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) Characteristic Symbol VDSS VGSS ID D2 D1 Schematic Diagram Value 30 ±10 400 Unit V V mA Thermal Characteristics Q1, Q2 @TA = 25°C unless otherwise specified Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range PD RθJA Tj, TSTG 280 446 -55 to +150 mW °C/W °C Electrical Characteristics Q1, Q2 @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Time Symbol Min Typ Max Unit Test Condition @ TC = 25°C BVDSS IDSS IGSS 30 ⎯ ⎯ ⎯ ⎯ V VGS = 0V, ID = 250μA ⎯ 1 μA VDS = 30V, VGS = 0V ⎯ ±10 ±1 μA VGS = ±10V, VDS = 0V VGS = ±5V, VDS = 0V VGS(th) 0.6 ⎯ 1.2 V VDS = VGS, ID = 250μA ⎯ ⎯ 2.2 VGS = 1.8V, ID = 20mA RDS (ON) ⎯ ⎯ ⎯ 1.5 ⎯ 1.2 Ω VGS = 2.5V, ID = 20mA VGS = 4.0V, ID = 100mA \|Yfs\| 100 ⎯ ⎯ mS VDS =10V, ID = 0.1A VSD 0.5 ⎯ 1.4 V VGS = 0V, IS = 115mA Ciss Coss ⎯ ⎯ 39 10 ⎯ ⎯ pF pF VDS = 3V, VGS = 0V f = 1.0MHz Crss ⎯ 3.6 ⎯ pF Turn-on Time ton ⎯ 11 ⎯ nS VDD = 5V, ID = 10 mA, Turn-off Time toff ⎯ 51 ⎯ nS VGS = 0-5V Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Short duration pulse test used to minimize self-heating effect. DMN32D2LDF Document number: DS31238 Rev. 3 - 2 1 of 4 www.diodes.com January 2008 © Diodes Incorporated Free Datasheet http://www.datasheet4u.com/ 1 page

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