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PDF DMN3150L Data sheet ( Hoja de datos )
| Número de pieza | DMN3150L | |
| Descripción | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
| Fabricantes | TY Semiconductor | |
| Logotipo |  |
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Product specification
DMN3150L
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance:
RDS(ON) < 54mΩ @ VGS = 10V
RDS(ON) < 72mΩ @ VGS = 4.5V
RDS(ON) < 115mΩ @ VGS = 2.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.008 grams (approximate)
SOT-23
TOP VIEW
Drain
Gate
Source
EQUIVALENT CIRCUIT
D
GS
Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Drain Current (Note 1)
Body-Diode Continuous Current (Note 1)
TA = 25°C
TA = 70°C
Pulsed
Symbol
VDSS
VGSS
ID
IDM
IS
Value
30
±12
3.8
3.1
15
2.0
Unit
V
V
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1.4
90
-55 to +150
Unit
W
°C/W
°C
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