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DMG3415UFY4 fiches techniques PDF

Diodes - P-CHANNEL ENHANCEMENT MODE MOSFET

Numéro de référence DMG3415UFY4
Description P-CHANNEL ENHANCEMENT MODE MOSFET
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DMG3415UFY4 fiche technique
Features
Low On-Resistance
39m@ VGS = -4.5V
52m@ VGS = -2.5V
65m@ VGS = -1.8V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
ESD Protected Up To 3kV
"Green" Device, Halogen and Antimony Free (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
DMG3415UFY4
P-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
Case: DFN2015H4-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
ESD PROTECTED TO 3kV
TOP VIEW
BOTTOM VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
Pulsed Drain Current (Note 4)
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
IDM
S
D
G
Internal Schematic
Value
-16
±8
-2.5
-2.2
-12
Units
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
0.49
250.7
-55 to +150
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t 10s.
4. Repetitive rating, pulse width limited by junction temperature.
Unit
W
°C/W
°C
DMG3415UFY4
Document number: DS31842 Rev. 4 - 2
1 of 6
www.diodes.com
December 2009
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/

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