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What is 2SA1873?

This electronic component, produced by the manufacturer "Toshiba Semiconductor", performs the same function as "Silicon PNP Epitaxial Type Transistor".


2SA1873 Datasheet PDF - Toshiba Semiconductor

Part Number 2SA1873
Description Silicon PNP Epitaxial Type Transistor
Manufacturers Toshiba Semiconductor 
Logo Toshiba Semiconductor Logo 


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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1873
2SA1873
Audio Frequency General Purpose Amplifier Applications
Small package (dual type)
High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
High hFE
Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA)
= 0.95 (typ.)
Complementary to 2SC4944
Unit: mm
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
VCBO
VCEO
VEBO
IC
IB
PC
(Note 1)
50
50
5
150
30
200
V
V
V
mA
mA
mW
Junction temperature
Tj
125 °C
JEDEC
Storage temperature range
Tstg
55~125
°C
JEITA
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
TOSHIBA
2-2L1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 6.2 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
Equivalent Circuit (top view)
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Test Condition
Collector cut-off current
ICBO
VCB = −50 V, IE = 0
Emitter cut-off current
IEBO
VEB = −5 V, IC = 0
DC current gain
hFE
(Note)
VCE = −6 V, IC = −2 mA
Collector-emitter saturation voltage
VCE (sat) IC = −100 mA, IB = −10 mA
Transition frequency
fT VCE = −10 V, IC = −1 mA
Collector output capacitance
Cob VCB = −10 V, IE = 0, f = 1 MHz
Note 2: hFE classification Y (Y): 120~240, GR (G): 200~400
( ) marking symbol
1
Min Typ. Max Unit
⎯ ⎯ −0.1 μA
⎯ ⎯ −0.1 μA
120 400
⎯ −0.1 0.3 V
80 ⎯ ⎯ MHz
4
7 pF
2007-11-01


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2SA1873 electronic component.


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