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2SA1869 fiches techniques PDF

Toshiba Semiconductor - Silicon PNP Epitaxial Type Transistor

Numéro de référence 2SA1869
Description Silicon PNP Epitaxial Type Transistor
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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2SA1869 fiche technique
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1869
Power Amplifier Applications
2SA1869
Unit: mm
Good linearity of hFE
Complementary to 2SC4935
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
VCBO
VCEO
VEBO
IC
IB
PC
50
50
5
3
0.3
10
V
V
V
A
A
W
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
JEDEC
JEITA
SC-67
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-09

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