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PDF 2SA1837 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1837 | |
| Descripción | Silicon PNP Epitaxial Type Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA1837
Power Amplifier Applications
Driver Stage Amplifier Applications
2SA1837
Unit: mm
• High transition frequency: fT = 70 MHz (typ.)
• Complementary to 2SC4793
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
−230
−230
−5
−1
−0.1
2.0
20
150
−55 to 150
Electrical Characteristics (Tc = 25°C)
Unit
V
V
V
A
A
W
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE
VCE (sat)
VBE
fT
Cob
VCB = −230 V, IE = 0
VEB = −5 V, IC = 0
IC = −10 mA, IB = 0
VCE = −5 V, IC = −100 mA
IC = −500 mA, IB = −50 mA
VCE = −5 V, IC = −500 mA
VCE = −10 V, IC = −100 mA
VCB = −10 V, IC = 0, f = 1 MHz
Min Typ. Max Unit
― ― −1.0 µA
― ― −1.0 µA
−230 ―
―
V
100 ― 320
―
― −1.5
V
―
― −1.0
V
― 70 ― MHz
― 30 ― pF
Marking
A1837
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-26
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SA1837.PDF ] | |
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