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2SA1832 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Toshiba Semiconductor - TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

شماره قطعه 2SA1832
شرح مفصل TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
تولید کننده Toshiba Semiconductor 
آرم Toshiba Semiconductor 


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2SA1832 شرح
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1832
Audio Frequency General Purpose Amplifier Applications
High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)
= 0.95 (typ.)
High hFE: hFE = 70~400
Complementary to 2SC4738
Small package
2SA1832
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 50 V
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCEO
VEBO
IC
IB
PC
Tj
Tstg
50
5
150
30
100
125
55~125
V
V
mA
mA
mW
°C
°C
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2H1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 2.4 mg (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = −50 V, IE = 0
IEBO
VEB = −5 V, IC = 0
hFE
(Note)
VCE = −6 V, IC = −2 mA
VCE (sat)
fT
IC = −100 mA, IB = −10 mA
VCE = −10 V, IC = −1 mA
Cob VCB = −10 V, IE = 0, f = 1 MHz
Note: hFE classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400
( ) marking symbol
Min Typ. Max Unit
⎯ ⎯ −0.1 μA
⎯ ⎯ −0.1 μA
70 400
⎯ −0.1 0.3 V
80 ⎯ ⎯ MHz
4
7 pF
Marking
1 2007-11-01
Free Datasheet http://www.Datasheet4U.com

قانون اساسیصفحه 3
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