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Numonyx - NAND Flash Memories

Numéro de référence NAND512W4A2C
Description NAND Flash Memories
Fabricant Numonyx 
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NAND512W4A2C fiche technique
NAND512R3A2C NAND512R4A2C
NAND512W3A2C NAND512W4A2C
512 Mbit, 528 byte/264 word page,
1.8 V/3 V, NAND Flash memories
Features
High density NAND Flash memories
– 512 Mbit memory array
– Cost effective solutions for mass
storage applications
NAND interface
– x 8 or x 16 bus width
– Multiplexed Address/ Data
Supply voltage: 1.8 V, 3.0 V
Page size
– x 8 device: (512 + 16 spare) bytes
– x 16 device: (256 + 8 spare) words
Block size
– x 8 device: (16 K + 512 spare) bytes
– x 16 device: (8 K + 256 spare) words
Page Read/Program
– Random access:
12 µs (3 V)/15 µs (1.8 V) (max)
– Sequential access:
30 ns (3 V)/50 ns (1.8 V) (min)
– Page Program time: 200 µs (typ)
Copy Back Program mode
Fast Block Erase: 2 ms (typ)
Status Register
Electronic signature
Chip Enable ‘don’t care’
Serial Number option
Table 1.
Device summary
Reference
NAND512-A2C
1. x16 organization only available for MCP.
TSOP48 12 x 20 mm
FBGA
VFBGA55 8 x 10 x 1 mm
VFBGA63 9 x 11 x 1 mm
Hardware Data Protection
– Program/Erase locked during Power
transitions
Data integrity
– 100,000 Program/Erase cycles (with
ECC)
– 10 years Data Retention
ECOPACK® packages
Development tools
– Error Correction Code models
– Bad Blocks Management and Wear
Leveling algorithms
– Hardware simulation models
Part number
NAND512R3A2C
NAND512R4A2C(1)
NAND512W3A2C
NAND512W4A2C(1)
January 2008
Rev 2
1/51
www.numonyx.com
1
Free Datasheet http://www.datasheet4u.com/

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