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2SA1822 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Toshiba Semiconductor - Silicon NPN Triple Diffused Type TRANSISTOR

شماره قطعه 2SA1822
شرح مفصل Silicon NPN Triple Diffused Type TRANSISTOR
تولید کننده Toshiba Semiconductor 
آرم Toshiba Semiconductor 


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2SA1822 شرح
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SA1822
High-Voltage Switching Applications
High-Speed DC-DC Converter Application
2SA1822
Unit: mm
Excellent switching times
: ton = 1.0 µs (max), tf = 1.0 µs (max) at IC = 0.3 A
High collector breakdown voltage: VCEO = 400 V
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
400
V
Collector-emitter voltage
VCEO
400
V
Emitter-base voltage
VEBO 7 V
Collector current
IC 1 A
Base current
IB 0.5 A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
2.0
W
25
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
JEDEC
JEITA
TOSHIBA
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 1.7 g (typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-09

قانون اساسیصفحه 5
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