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PDF 2SA1806 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1806 | |
| Descripción | Silicon PNP Epitaxial Transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SA1806
Silicon PNP epitaxial planer type
For high speed switching
Unit: mm
s Features
q High-speed switching.
q Low collector to emitter saturation voltage VCE(sat).
q SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–15
–15
–4
–100
–50
125
125
–55 ~ +125
Unit
V
V
V
mA
mA
mW
˚C
˚C
1.6±0.15
0.4 0.8±0.1 0.4
1
3
2
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol : AK
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
ICBO
IEBO
hFE1*
hFE2
VCB = –8V, IE = 0
VEB = –3V, IC = 0
VCE = –1V, IC = –10mA
VCE = –1V, IC = –1mA
– 0.1 µA
– 0.1 µA
50 150
30
Collector to emitter saturation voltage VCE(sat)
IC = –10mA, IB = – 1mA
– 0.1 – 0.2
V
Transition frequency
fT VCB = –10V, IE = 10mA, f = 200MHz 800 1500
MHz
Collector output capacitance
Cob
VCB = –5V, IE = 0, f = 1MHz
1 pF
Turn-on time
ton (Note 1) Next page
12 ns
Turn-off time
toff (Note 1) Next page
20 ns
Storage time
tstg (Note 1) Next page
19 ns
*hFE1 Rank classification
Rank
hFE1
Marking Symbol
Q
50 ~ 120
AKQ
R
90 ~ 150
AKR
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SA1806.PDF ] | |
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