|
|
Numéro de référence | 2SA1774 | ||
Description | PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT | ||
Fabricant | Motorola Inc | ||
Logo | |||
1 Page
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2SA1774/D
PNP Silicon General Purpose
Amplifier Transistor
This PNP transistor is designed for general purpose amplifier applications. This
device is housed in the SOT–416/SC–90 package which is designed for low power
surface mount applications, where board space is at a premium.
• Reduces Board Space
• High hFE, 210 – 460 (typical)
• Low VCE(sat), < 0.5 V
• Available in 8 mm, 7–inch/3000 Unit Tape and Reel
2SA1774
PNP GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
3
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
2
1
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
DEVICE MARKING
2SA1774 = F9
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
–60
–50
–6.0
–100
Vdc
Vdc
Vdc
mAdc
CASE 463–01, STYLE 1
SOT–416/SC–90
COLLECTOR
3
THERMAL CHARACTERISTICS
Rating
Symbol
Power Dissipation(1)
PD
Junction Temperature
TJ
Storage Temperature Range
Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Max
150
150
– 55 ~ + 150
Symbol
Unit
mW
°C
°C
Min
1
BASE
2
EMITTER
Typ Max Unit
Collector–Base Breakdown Voltage (IC = –50 µAdc, IE = 0)
V(BR)CBO
–60
—
— Vdc
Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0)
V(BR)CEO
–50
—
— Vdc
Emitter–Base Breakdown Voltage (IE = –50 µAdc, IE = 0)
V(BR)EBO
–6.0
—
— Vdc
Collector–Base Cutoff Current (VCB = –30 Vdc, IE = 0)
ICBO — — –0.5 nA
Emitter–Base Cutoff Current (VEB = –5.0 Vdc, IB = 0)
Collector–Emitter Saturation Voltage(2)
(IC = –50 mAdc, IB = –5.0 mAdc)
DC Current Gain(2)
(VCE = –6.0 Vdc, IC = –1.0 mAdc)
IEBO
VCE(sat)
—
—
— –0.5 µA
Vdc
— –0.5
hFE —
120 — 560
Transition Frequency
(VCE = –12 Vdc, IC = –2.0 mAdc, f = 30 MHz)
fT MHz
— 140 —
Output Capacitance (VCB = –12 Vdc, IE = 0 Adc, f = 1 MHz)
COB
— 3.5 — pF
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.
Thermal Clad is a trademark of the Bergquist Company
REV 1
©MMoototorroollaa, ISncm. 1a9l9l–6Signal Transistors, FETs and Diodes Device Data
1
|
|||
Pages | Pages 6 | ||
Télécharger | [ 2SA1774 ] |
No | Description détaillée | Fabricant |
2SA1770 | High-Voltage Switching Applications | Sanyo Semicon Device |
2SA1770 | Bipolar Transistor | ON Semiconductor |
2SA1770 | Silicon PNP Power Transistor | Inchange Semiconductor |
2SA1771 | TRANSISTOR (HIGH CURRENT SWITCHING APPLICATIONS) | Toshiba Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |