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Motorola Inc - PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

Numéro de référence 2SA1774
Description PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
Fabricant Motorola Inc 
Logo Motorola  Inc 





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2SA1774 fiche technique
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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PNP Silicon General Purpose
Amplifier Transistor
This PNP transistor is designed for general purpose amplifier applications. This
device is housed in the SOT–416/SC–90 package which is designed for low power
surface mount applications, where board space is at a premium.
Reduces Board Space
High hFE, 210 – 460 (typical)
Low VCE(sat), < 0.5 V
Available in 8 mm, 7–inch/3000 Unit Tape and Reel
2SA1774
PNP GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
3
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
2
1
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
DEVICE MARKING
2SA1774 = F9
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
–60
–50
–6.0
–100
Vdc
Vdc
Vdc
mAdc
CASE 463–01, STYLE 1
SOT–416/SC–90
COLLECTOR
3
THERMAL CHARACTERISTICS
Rating
Symbol
Power Dissipation(1)
PD
Junction Temperature
TJ
Storage Temperature Range
Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Max
150
150
– 55 ~ + 150
Symbol
Unit
mW
°C
°C
Min
1
BASE
2
EMITTER
Typ Max Unit
Collector–Base Breakdown Voltage (IC = –50 µAdc, IE = 0)
V(BR)CBO
–60
— Vdc
Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0)
V(BR)CEO
–50
— Vdc
Emitter–Base Breakdown Voltage (IE = –50 µAdc, IE = 0)
V(BR)EBO
–6.0
— Vdc
Collector–Base Cutoff Current (VCB = –30 Vdc, IE = 0)
ICBO — — –0.5 nA
Emitter–Base Cutoff Current (VEB = –5.0 Vdc, IB = 0)
Collector–Emitter Saturation Voltage(2)
(IC = –50 mAdc, IB = –5.0 mAdc)
DC Current Gain(2)
(VCE = –6.0 Vdc, IC = –1.0 mAdc)
IEBO
VCE(sat)
— –0.5 µA
Vdc
— –0.5
hFE —
120 — 560
Transition Frequency
(VCE = –12 Vdc, IC = –2.0 mAdc, f = 30 MHz)
fT MHz
— 140 —
Output Capacitance (VCB = –12 Vdc, IE = 0 Adc, f = 1 MHz)
COB
— 3.5 — pF
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width 300 µs, D.C. 2%.
Thermal Clad is a trademark of the Bergquist Company
REV 1
©MMoototorroollaa, ISncm. 1a9l9l–6Signal Transistors, FETs and Diodes Device Data
1

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