DataSheet.es    


PDF FDMC86324 Data sheet ( Hoja de datos )

Número de pieza FDMC86324
Descripción N-Channel Power Trench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de FDMC86324 (archivo pdf) en la parte inferior de esta página.


Total 7 Páginas

No Preview Available ! FDMC86324 Hoja de datos, Descripción, Manual

May 2010
FDMC86324
N-Channel Power Trench® MOSFET
80 V, 20 A, 23 mΩ
Features
General Description
„ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A
„ Max rDS(on) = 37 mΩ at VGS = 6 V, ID = 4 A
„ Low Profile - 1 mm max in Power 33
„ 100% UIL Tested
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
„ DC - DC Conversion
Top Bottom
S Pin 1
S
S
G
D
D
D
D
Power 33
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
80
±20
20
30
7
30
72
41
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3
53
°C/W
Device Marking
FDMC86324
Device
FDMC86324
Package
Power 33
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
FDMC86324 Rev.C
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

1 page




FDMC86324 pdf
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
PDM
0.01
0.001
10-4
SINGLE PULSE
RθJA = 125 oC/W
10-3
10-2
10-1 1
t, RECTANGULAR PULSE DURATION (sec)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10 100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
FDMC86324 Rev.C
5 www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

5 Page










PáginasTotal 7 Páginas
PDF Descargar[ Datasheet FDMC86324.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
FDMC86320MOSFET ( Transistor )Fairchild Semiconductor
Fairchild Semiconductor
FDMC86324N-Channel Power Trench MOSFETFairchild Semiconductor
Fairchild Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar