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PDF FDMC8622 Data sheet ( Hoja de datos )
| Número de pieza | FDMC8622 | |
| Descripción | N-Channel Power Trench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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September 2012
FDMC8622
N-Channel Power Trench® MOSFET
100 V, 16 A, 56 m:
Features
General Description
Max rDS(on) = 56 m: at VGS = 10 V, ID = 4 A
Max rDS(on) = 90 m: at VGS = 6 V, ID = 3 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used
surface mount package
100% UIL Tested
Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been optimized for rDS(on), switching performance and
ruggedness.
Application
DC-DC Primary Switch
D
D
D
D
D5
D6
D7
4G
3S
2S
G
SS
S
MLP 3.3X3.3
D8
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
TC = 25 °C
TC = 25 °C
-Continuous
TA = 25 °C
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
Ratings
100
±20
16
16
4
30
37
31
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDMC8622
Device
FDMC8622
Package
MLP 3.3X3.3
(Note 1)
(Note 1a)
4.0
50
°C/W
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMC8622 Rev.C2
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
SINGLE PULSE
RTJA = 125 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
0.0001
10-4
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2012 Fairchild Semiconductor Corporation
FDMC8622 Rev.C2
5
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMC8622.PDF ] | |
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