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2SA1767 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Panasonic Semiconductor - Silicon NPN triple diffusion planer type

شماره قطعه 2SA1767
شرح مفصل Silicon NPN triple diffusion planer type
تولید کننده Panasonic Semiconductor 
آرم Panasonic Semiconductor 


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2SA1767 شرح
Transistor
2SA1767
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC1473A
s Features
q High collector to emitter voltage VCEO.
5.0±0.2
Unit: mm
4.0±0.2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–300
–300
–5
–100
–70
750
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCEO
VEBO
hFE*
IC = –100µA, IB = 0
IE = –1µA, IC = 0
VCE = –10V, IC = –5mA
–300
–5
60
V
V
150
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat)
fT
Cob
IC = –10mA, IB = –1mA
VCB = –10V, IE = 10mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
– 0.6
V
50 MHz
7 pF
*hFE Rank classification
Rank
Q
hFE 60 ~ 150
1

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