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KI5908DC fiches techniques PDF

Kexin - Dual N-Channel MOSFET

Numéro de référence KI5908DC
Description Dual N-Channel MOSFET
Fabricant Kexin 
Logo Kexin 





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KI5908DC fiche technique
SMD Type
Dual N-Channel 20-V (D-S) MOSFET
KI5908DC
ICIC
Features
TrenchFET Power MOSFETS
Ultra Low rDS(on) and Excellent Power
Handling In Compact Footprint
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 ) TA = 25
TA = 85
Pulsed Drain Current
Continuous Source Current (Diode Conduction)*
Maximum Power Dissipation *
TA = 25
TA = 85
Operating Junction and Storage Temperature Range
Soldering Recommendations
*Surface Mounted on 1" X 1" FR4 Board.
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient *
Maximum Junction-to-Foot (Drain)
t 5 sec
Steady-State
Steady-State
* Surface Mounted on 1" X 1" FR4 Board.
Symbol
RthJA
RthJF
5secs
5.9
4.2
Steady State
20
8
4.4
3.1
1.8 0.9
2.1 1.1
1.1 0.6
-55 to 150
260
Unit
V
A
W
Typical
50
90
30
Maximum
60
110
40
Unit
/W
www.kexin.com.cn 1
Free Datasheet http://www.datasheet4u.com/

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