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PDF 2N3375 Data sheet ( Hoja de datos )
| Número de pieza | 2N3375 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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2N3375
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2N3375 is Designed for
Class A,B,C Amplifier,Oscillator and
Driver Applications Covering the
VHF-UHF Region.
FEATURES INCLUDE:
• Isolated Package
MAXIMUM RATINGS
IC 1.5 A
VCE
PDISS
TJ
TSTG
θJC
40 V
11.6 W @ TC = 25 OC
-65OC to +200 OC
-65OC to +200 OC
15 OC/W
PACKAGE STYLE TO- 60(ISOLATED)
1 = EMITTER 2 = BASE
3 = COLLECTOR
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCEO
IC = 200 mA
BVCEX
VBE = -1.5 V IC = 100 mA
BVCBO
IC = 500 µA
ICEO
VCE = 30 V
IEBO
VEB = 4.0 V
hFE VCE = 5.0 V IC = 250 mA
VCE(SAT)
IC = 500 mA IB = 100 mA
MINIMUM TYPICAL MAXIMUM
40
65
65
100
100
10
1.0
UNITS
V
V
V
µA
µA
---
V
Cob VCB = 30 V
ft VCE = 28 V IC = 150 mA
f = 1.0 MHz
f = 100 MHz
10 pF
500 MHz
Pout
GP
VCE = 28 V
Pin = 1.0 W
η
f = 400 MHz
3.0
4.8
40
W
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N3375.PDF ] | |
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