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Tak Cheong Electronics - N-Channel Power MOSFET / Transistor

Numéro de référence TFP7N65
Description N-Channel Power MOSFET / Transistor
Fabricant Tak Cheong Electronics 
Logo Tak Cheong Electronics 





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TFP7N65 fiche technique
®
TAK CHEONG
SEMICONDUCTOR
N-Channel Power MOSFET
7.2A, 650V, 1.5
General Description
The N-Channel MOSFET is used an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. This advanced
technology has been especially tailored to minimize on-state
resistance, provide superior switching performance. This
device is well suited for high efficiency switched mode power
suppliers, active power factor correction, electronic lamp
ballasts based half bridge topology.
Features
Robust high voltage termination
Avalanche energy specified
Diode is characterized for use in bridge circuits
Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted )
Symbol
Parameter
VDSS
VGSS
ID
IDM
Drain- Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
PD Power Dissipation
Derating factor above 25
(Note 2)
EAS
Single Pulsed Avalanche Energy
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 2)
TJ Operating Junction Temperature
Tstg
Storage Temperature Range
Notes:
1. L=9mH, IAS=7.2A, VDD=50V, RG=50Ω, Starting TJ=25
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
THERMAL CHARACTERISTICS
Symbol
Parameter
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1
2
3
TO-220AB
1 = Gate
2 = Drain
3 = Source
DEVICE MARKING DIAGRAM
L xxyy
TFP
XXXX
L = Tak Cheong Logo
xxyy = Monthly Date Code
TFPXXXX = Device Type
D
G
Value
650
±30
7.2
28.8
137
1.1
274
13.7
150
- 55 to +150
S
Units
V
V
A
A
W
W/
mJ
mJ
Value
0.91
62.5
Unit
/W
/W
Number: DB-187
March 2010, Revision B
Page 1
Free Datasheet http://www.datasheet4u.com/

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