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Numéro de référence | TFP7N65 | ||
Description | N-Channel Power MOSFET / Transistor | ||
Fabricant | Tak Cheong Electronics | ||
Logo | |||
®
TAK CHEONG
SEMICONDUCTOR
N-Channel Power MOSFET
7.2A, 650V, 1.5Ω
General Description
The N-Channel MOSFET is used an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. This advanced
technology has been especially tailored to minimize on-state
resistance, provide superior switching performance. This
device is well suited for high efficiency switched mode power
suppliers, active power factor correction, electronic lamp
ballasts based half bridge topology.
Features
● Robust high voltage termination
● Avalanche energy specified
● Diode is characterized for use in bridge circuits
● Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted )
Symbol
Parameter
VDSS
VGSS
ID
IDM
Drain- Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
PD Power Dissipation
Derating factor above 25℃
(Note 2)
EAS
Single Pulsed Avalanche Energy
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 2)
TJ Operating Junction Temperature
Tstg
Storage Temperature Range
Notes:
1. L=9mH, IAS=7.2A, VDD=50V, RG=50Ω, Starting TJ=25℃
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
THERMAL CHARACTERISTICS
Symbol
Parameter
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1
2
3
TO-220AB
1 = Gate
2 = Drain
3 = Source
DEVICE MARKING DIAGRAM
L xxyy
TFP
XXXX
L = Tak Cheong Logo
xxyy = Monthly Date Code
TFPXXXX = Device Type
D
G
Value
650
±30
7.2
28.8
137
1.1
274
13.7
150
- 55 to +150
S
Units
V
V
A
A
W
W/℃
mJ
mJ
℃
℃
Value
0.91
62.5
Unit
℃/W
℃/W
Number: DB-187
March 2010, Revision B
Page 1
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 8 | ||
Télécharger | [ TFP7N65 ] |
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