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PDF TFP70N06 Data sheet ( Hoja de datos )
| Número de pieza | TFP70N06 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Tak Cheong Electronics | |
| Logotipo |  |
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®
TAK CHEONG
SEMICONDUCTOR
N-Channel Power MOSFET
70A, 60V, 0.014Ω
GENERAL DESCRIPTION
This N-Channel MOSFET is used an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. This advanced
technology has been especially tailored to minimize on-state
resistance, provide superior switching performance. This
device is well suited for high efficiency switched mode power
suppliers, active power factor correction, electronic lamp
ballasts based half bridge topology.
FEATURES
● Avalanche energy specified
● Gate Charge (Typical 70nC)
● High Ruggedness
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted )
Symbol
Parameter
VDSS
Drain- Source Voltage
VGSS
Gate-Source Voltage
ID Drain Current
IDM Drain Current Pulsed
PD Power Dissipation
Derating Factor above 25℃
(Note 2)
EAS
Single Pulsed Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
TJ Operating Junction Temperature
Tstg
Storage Temperature Range
Notes:
1. L=250uH, IAS=70A, VDD=25V, RG=0Ω, Starting TJ=25℃.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. ISD ≤ 70A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ=25℃.
THERMAL CHARACTERISTICS
Symbol
Parameter
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
12
3
1 = Gate
2 = Drain
3 = Source
TO-220AB
DEVICE MARKING DIAGRAM
L xxyy
TFP
XXXX
L = Tak Cheong Logo
xxyy = Monthly Date Code
TFPXXXX = Device Type
D
G
Value
60
±25
70
280
158
1.05
800
7.0
150
- 55 to +150
S
Units
V
V
A
A
W
W/℃
mJ
V/ns
℃
℃
Value
0.95
62.5
Unit
℃/W
℃/W
Number: DB-229
August 2011, Revision A
Page 1
Free Datasheet http://www.datasheet4u.com/
1 page  
®
TAK CHEONG
SEMICONDUCTOR
Number: DB-229
August 2011, Revision A
Page 5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet TFP70N06.PDF ] | |
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