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PDF 2SA1619 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1619 | |
| Descripción | Silicon PNP Epitaxial Transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SA1619, 2SA1619A
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SC4208 and 2SC4208A
s Features
q Complementary pair with 2SC4208 and 2SC4208A.
q Allowing supply with the radial taping and automatic insertion
possible.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to 2SA1619
base voltage 2SA1619A
Collector to 2SA1619
emitter voltage 2SA1619A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–30
–60
–25
–50
–5
–1
– 0.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
1.27
+0.15
0.45 –0.1
+0.15
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
TO–92NL Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Collector to base 2SA1619
voltage
2SA1619A
ICBO
VCBO
Collector to emitter 2SA1619
voltage
VCEO
2SA1619A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
VEBO
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
IC = –10µA, IE = 0
IC = –10mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –150mA
VCE = –10V, IC = –500mA
IC = –300mA, IB = –30mA
IC = –300mA, IB = –30mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min typ max Unit
– 0.1 µA
–30
V
–60
–25
V
–50
–5 V
85 160 340
40
– 0.35 – 0.6
V
–1.1 –1.5
V
200 MHz
6 15 pF
*hFE1 Rank classification
Rank
Q
R
hFE1 85 ~ 170 120 ~ 240
S
170 ~ 340
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SA1619.PDF ] | |
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