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Panasonic Semiconductor - Silicon PNP Epitaxial Transistor

Numéro de référence 2SA1535
Description Silicon PNP Epitaxial Transistor
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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2SA1535 fiche technique
Power Transistors
2SA1535, 2SA1535A
Silicon PNP epitaxial planar type
For low-frequency driver and high power amplification
Complementary to 2SC3944 and 2SC3944A
s Features
q Satisfactory foward current transfer ratio hFE vs. collector cur-
rent IC characteristics
q High transition frequency fT
q Makes up a complementary pair with 2SC3944 and 2SC3944A,
which is optimum for the driver-stage of a 60 to 100W output
amplifier.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SA1535
base voltage 2SA1535A
Collector to 2SA1535
emitter voltage 2SA1535A
VCBO
VCEO
–150
–180
–150
–180
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
–5
–1.5
–1
15
2.0
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current 2SA1535
Collector to emitter 2SA1535
voltage
2SA1535A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCEO
VEBO
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
Cob
VCB = –150V, IE = 0
IC = –1mA, IB = 0
IC = –100µA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –150mA
VCE = –5V, IC = –500mA
IC = –500mA, IB = –50mA
IC = –500mA, IB = –50mA
VCE = –10V, IC = –50mA, f = 10MHz
VCB = –10V, IE = 0, f = 1MHz
*hFE1 Rank classification
Rank
Q
R
hFE1 90 to 155 130 to 220
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
–10 µA
–150
–180
V
–5 V
90 160 220
50 100
– 0.5 –2.0
V
–1.0 –2.0
V
200 MHz
30 50 pF
1

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