DataSheetWiki


2SA1419 fiches techniques PDF

Sanyo Semicon Device - PNP/NPN Epitaxial Planar Silicon Transistors

Numéro de référence 2SA1419
Description PNP/NPN Epitaxial Planar Silicon Transistors
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





1 Page

No Preview Available !





2SA1419 fiche technique
Ordering number:ENN2007A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1419/2SC3649
High-Voltage Switching Applications
Features
· Adoption of FBET, MBIT processes.
· High breakdown voltage and large current capacity.
· Ultrasmall size making it easy to provide high-
density hybrid ICs.
Package Dimensions
unit:mm
2038A
[2SA1419/2SC3649]
4.5
1.6 1.5
( ) : 2SA1419
Specifications
Absolute Maximum Ratings at Ta = 25˚C
0.4 0.5
3 1.5 2
3.0
1
0.75
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Moutned on ceramic board (250mm2×0.8mm)
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=()120V, IE=0
Emitter Cutoff Current
IEBO VEB=()4V, IC=0
DC Current Gain
hFE1
hFE2
VCE=()5V, IC=()100mA
VCE=()5V, IC=()10mA
* : The 2SA1419/2SC3649 are classified by 100mA hFE as follows :
Rank
R
S
T
hFE 100 to 200
Marking 2SA1419 : AE
2SC3649 : CE
140 S 280 200 to 400
hFE rank : R, S, T
Ratings
()180
()160
()6
()1.5
()2.5
500
1.5
150
55 to +150
Unit
V
V
V
A
A
mW
W
˚C
˚C
Ratings
min typ max
Unit
()1 µA
()1 µA
100*
400*
80
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3103TN (KT)/71598HA (KT)/4277TA, TS No.2007-1/4

PagesPages 4
Télécharger [ 2SA1419 ]


Fiche technique recommandé

No Description détaillée Fabricant
2SA1411 Transistor ETC
ETC
2SA1411 Transistor Kexin
Kexin
2SA1411 Transistor TY Semiconductor
TY Semiconductor
2SA1412 PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 NEC
NEC

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche