DataSheetWiki


2SA1386A fiches techniques PDF

Sanken electric - Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)

Numéro de référence 2SA1386A
Description Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)
Fabricant Sanken electric 
Logo Sanken electric 





1 Page

No Preview Available !





2SA1386A fiche technique
LAPT 2SA1386/1386A
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A)
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
Application : Audio and General Purpose
(Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SA1386 2SA1386A Unit
Symbol
Conditions
2SA1386 2SA1386A Unit
VCBO –160
–180
V
ICBO
VCEO –160
–180
V
VCB=
–100max
–160
–100max
–180
µA
V
VEBO
–5
V IEBO
VEB=–5V
–100max
µA
IC –15
A V(BR)CEO
IC=–25mA
–160min
–180min
V
IB –4
A hFE
VCE=–4V, IC=–5A
50min
PC 130(Tc=25°C)
W VCE(sat) IC=–5A, IB=–0.5A
–2.0max
V
Tj 150
°C fT
VCE=–12V, IE=2A
40typ
MHz
Tstg –55 to +150
°C COB
VCB=–10V, f=1MHz
500typ
pF
sTypical Switching Characteristics (Common Emitter) hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
VCC
RL
IC
VBB1
VBB2
IB1
IB2
ton tstg
tf
(V) () (A) (V) (V) (A) (A) (µs) (µs) (µs)
–40 4 –10 –10 5 –1 1 0.3typ 0.7typ 0.2typ
15.6±0.4
9.6
4.8±0.2
2.0±0.1
a ø3.2±0.1
b
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
5.45±0.1
5.45±0.1
BCE
1.4
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
–15
500
mA
4
0
0m
A
–300mA
–200mA
–10
–150mA
–100mA
–5
–50mA
IB=–20mA
0
0 –1 –2 –3 –4
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
–3
I C– V BE Temperature Characteristics (Typical)
(VCE=–4V)
–15
–2 –10
–1
–5A
IC=–10A
0
0
–0.2
–0.4
–0.6
–0.8
–1.0
Base Current IB(A)
–5
0
0 –1 –2
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
300
(VCE=–4V)
h FE– I C Temperature Characteristics (Typical)
(VCE=–4V)
200
θ j-a– t Characteristics
3
100 Typ
125˚C
100
25˚C
1
–30˚C
0.5
50
10
–0.02
–0.1
–0.5 –1
Collector Current IC(A)
–5 –10 –15
20
–0.02
–0.1
–0.5 –1
Collector Current IC(A)
0.1
–5 –10 –15
1
10 100
Time t(ms)
1000 2000
f T– I E Characteristics (Typical)
(VCE=–12V)
60
40 Typ
20
0
0.02
18
0.1 1
Emitter Current IE(A)
10
Safe Operating Area (Single Pulse)
–40
10ms
–10 DC
–5
–1
–0.5
–0.1
–0.05
–3
Without Heatsink
Natural Cooling
1.2SA1386
2.2SA1386A
12
–10 –50 –100
Collector-Emitter Voltage VCE(V)
–200
Pc–Ta Derating
130
100
50
3.5
0
0
Without Heatsink
25 50 75 100 125
Ambient Temperature Ta(˚C)
150

PagesPages 1
Télécharger [ 2SA1386A ]


Fiche technique recommandé

No Description détaillée Fabricant
2SA1386 POWER TRANSISTORS(15A/130W) Mospec Semiconductor
Mospec Semiconductor
2SA1386 Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose) Sanken electric
Sanken electric
2SA1386 SILICON POWER TRANSISTOR SavantIC
SavantIC
2SA1386 Transistor Inchange Semiconductor
Inchange Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche