DataSheetWiki


2SA1320 fiches techniques PDF

Toshiba Semiconductor - TRANSISTOR (HIGH VOLTAGE SWITCHING/ COLOR TV CHROMA OUTPUT APPLICATIONS)

Numéro de référence 2SA1320
Description TRANSISTOR (HIGH VOLTAGE SWITCHING/ COLOR TV CHROMA OUTPUT APPLICATIONS)
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





1 Page

No Preview Available !





2SA1320 fiche technique
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
2SA1320
2SA1320
High Voltage Switching Applications
Color TV Chroma Output Applications
Unit: mm
High voltage: VCEO = 250 V
Low Cre: 1.8 pF (max)
Complementary to 2SC3333
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
250
V
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
VCEO
VEBO
IC
ICP
250
5
50
100
V
V
mA
Base current
Collector power dissipation
Junction temperature
Storage temperature range
IB 20 mA
PC 0.6 W
Tj 150 °C
Tstg
55~150
°C
JEDEC
JEITA
TOSHIBA
TO-92
SC-43
2-5F1B
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.21 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Reverse transfer capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE
VCE (sat)
VBE
fT
Cre
VCB = −200 V, IE = 0
VEB = −5 V, IC = 0
IC = −1 mA, IB = 0
VCE = −20 V, IC = −25 mA
IC = −10 mA, IB = −1 mA
VCE = −20 V, IC = −25 mA
VCE = −10 V, IC = −10 mA
VCB = −30 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
250
50
60
0.75
80
0.1
0.1
1.5
1.8
μA
μA
V
V
V
MHz
pF
1 2007-11-01

PagesPages 4
Télécharger [ 2SA1320 ]


Fiche technique recommandé

No Description détaillée Fabricant
2SA1320 TRANSISTOR (HIGH VOLTAGE SWITCHING/ COLOR TV CHROMA OUTPUT APPLICATIONS) Toshiba Semiconductor
Toshiba Semiconductor
2SA1321 TRANSISTOR (HIGH VOLTAGE SWITCHING/ COLOR TV CHROMA OUTPUT APPLICATIONS) Toshiba Semiconductor
Toshiba Semiconductor
2SA1323 Silicon PNP Epitaxial Transistor Panasonic Semiconductor
Panasonic Semiconductor
2SA1323 Silicon NPN epitaxial planer type(For high-frequency amplification) Panasonic Semiconductor
Panasonic Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche