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Numéro de référence | 2SA1315 | ||
Description | TRANSISTOR (POWER AMPLIFIER/ SWITCHING APPLICATIONS) | ||
Fabricant | Toshiba Semiconductor | ||
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1 Page
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1315
Power Amplifier Applications
Power Switching Applications
2SA1315
Unit: mm
• Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)
• High-speed switching time: tstg = 1.0 μs (typ.)
• Complementary to 2SC3328
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO −80 V
Collector-emitter voltage
VCEO −80 V
Emitter-base voltage
VEBO −5 V
Collector current
IC −2 A
Base current
IB −1 A
Collector power dissipation
PC
900 mW
JEDEC
TO-92MOD
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEITA
TOSHIBA
―
2-5J1A
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.36 g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2009-12-21
Free Datasheet http://www.Datasheet4U.com
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Pages | Pages 5 | ||
Télécharger | [ 2SA1315 ] |
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