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PDF 2SA1191 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1191 | |
| Descripción | Silicon PNP Epitaxial | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SA1191 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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2SA1190, 2SA1191
Silicon PNP Epitaxial
Application
• Low frequency low noise amplifier
• Complementary pair with 2SC2855 and 2SC2856
Outline
TO-92 (1)
3
2
1
1. Emitter
2. Collector
3. Base
1 page  
–10.000
–1,000
Collector Cutoff Current vs.
Collector to Base Voltage
IE = 0
Ta = 75°C
–100
–10
25
–25
–1
0 –20 –40 –60 –80 –100
Collector to Base Voltage VCB (V)
–1,000
–100
Emitter Cutoff Current vs.
Emitter to Base Voltage
IC = 0
Ta = 75°C
–10
25
–1.0
–25
–0.1
0
–2 –4 –6 –8 –10
Emitter to Base Voltage VEB (V)
2SA1190, 2SA1191
–1,000
Collector Cutoff Current vs.
Collector to Emitter Voltage
RBE = ∞
–100
Ta = 75°C
25
–10
–25
–1.0
–0.1
0
–20 –40 –60 –80 –100
Collector to Emitter Voltage VCE (V)
Collector to Emitter Breakdown Voltage vs.
Base to Emitter Resistance
–190
Typical Value
IC = –1 mA
–180
–170
–160
–150
–140
10 100 1 k 10 k 100 k
Base to Emitter Resistance RBE (Ω)
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet 2SA1191.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SA1190 | Silicon PNP Epitaxial | Hitachi Semiconductor |
| 2SA1190 | Silicon PNP Epitaxial |  Renesas |
| 2SA1191 | Silicon PNP Epitaxial | Hitachi Semiconductor |
| 2SA1193 | Silicon PNP Epitaxial/ Darlington | Hitachi Semiconductor |
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