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Número de pieza | FGPF4533 | |
Descripción | PDP IGBT | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FGPF4533 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! FGPF4533
330V, PDP IGBT
Features
• High current capability
• Low saturation voltage: VCE (sat) =1.55 V @ IC = 50 A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• PDP System
August 2010
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
GC E
TO-220F
(Retractable)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC pulse(1)*
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJC(IGBT)
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 5μsec
* Ic_pluse limited by max Tj
Ratings
330
± 30
200
28.4
11.4
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
4.4
62.5
Units
V
V
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2010 Fairchild Semiconductor Corporation
FGPF4533 Rev. B
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
100
Figure 14. Turn-off Characteristics vs.
Collector Current
400
tr
10
td(on)
Common Emitter
VGE = 15V, RG = 5Ω
TC = 25oC
TC = 125oC
1
10 20 30 40 50
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance
5000
1000
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
Eoff
tf
100
Common Emitter
VGE = 15V, RG = 5Ω
TC = 25oC
TC = 125oC
10
10
20
30
td(off)
40
Collector Current, IC [A]
50
Figure 16. Switching Loss vs. Collector Current
1000
Eoff
100
100
Eon
10
0 10 20 30 40 50
Gate Resistance, RG [Ω]
Figure 17. Turn off Switching SOA Characteristics
500
100
10
1
10
Eon Common Emitter
VGE = 15V, RG = 5Ω
TC = 25oC
TC = 125oC
20 30 40
Collector Current, IC [A]
50
10
1
0.1
1
Safe Operating Area
VGE = 15V, TC = 125oC
10 100
Collector-Emitter Voltage, VCE [V]
500
FGPF4533 Rev. B
5 www.fairchildsemi.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet FGPF4533.PDF ] |
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