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PDF FDS89161LZ Data sheet ( Hoja de datos )
| Número de pieza | FDS89161LZ | |
| Descripción | Dual N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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June 2011
FDS89161LZ
Dual N-Channel PowerTrench® MOSFET
100 V, 2.7 A, 105 mΩ
Features
General Description
Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A
Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used
surface mount package
CDM ESD protection level > 2KV typical (Note 4)
100% UIL Tested
This N-Channel logic Level MOSFETs are produced using
Fairchild Semiconductor‘s advanced Power Trench® process
that has been special tailored to minimize the on-state
resisitance and yet maintain superior switching performance.
G-S zener has been added to enhance ESD voltage level.
Application
DC-DC conversion
RoHS Compliant
D2
D1
D1
D2
Pin 1
G2
S2
G1
S1
SO-8
D2 5
D2 6
D1 7
D1 8
Q2
Q1
4 G2
3 S2
2 G1
1 S1
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note1a)
Ratings
100
±20
2.7
15
13
31
1.6
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
4.0
78
°C/W
Device Marking
FDS89161LZ
Device
FDS89161LZ
Package
SO-8
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2011 Fairchild Semiconductor Corporation
FDS89161LZ Rev. C4
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page  
Typical Characteristics ( N-Channel) TJ = 25°C unless otherwise noted
1000
100
10
SINGLE PULSE
RθJA = 135 oC/W
1 TA = 25 oC
0.5
10-4
10-3
10-2
10-1
1
t, PULSE WIDTH (sec)
10
Figure 13. Single Pulse Maximum Power Dissipation
2
1 DUTY CYCLE-DESCENDING ORDER
102
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 135 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.001
10-4
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
103
1000
©2011 Fairchild Semiconductor Corporation
FDS89161LZ Rev. C4
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDS89161LZ.PDF ] | |
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