FDMS8670AS Datasheet PDF - Fairchild Semiconductor
| Part Number | FDMS8670AS | |
| Description | N-Channel MOSFET | |
| Manufacturers | Fairchild Semiconductor | |
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April 2008
FDMS8670AS
N-Channel PowerTrench® SyncFETTM
30V, 42A, 3.0mΩ
tm
Features
General Description
Max rDS(on) = 3.0mΩ at VGS = 10V, ID = 23A
Max rDS(on) = 4.7mΩ at VGS = 4.5V, ID = 18A
Advanced Package and Silicon combination
for low rDS(on) and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
RoHS Compliant
The FDMS8670AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
Pin 1
S
S
S
G
D
D
D
D
Power 56 (Bottom view)
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
30
±20
42
127
23
200
384
50
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.6
50
°C/W
Device Marking
FDMS8670AS
Device
FDMS8670AS
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000units
©2008 Fairchild Semiconductor Corporation
FDMS8670AS Rev.C
1
www.fairchildsemi.com
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Typical Characteristics TJ = 25°C unless otherwise noted
2
1
0.1
0.01
0.001
0.0005
10-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 125oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
102
103
©2008 Fairchild Semiconductor Corporation
FDMS8670AS Rev.C
5
www.fairchildsemi.com
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| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ FDMS8670AS.PDF Datasheet ] | |
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