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Numéro de référence | FDMS86310 | ||
Description | N-Channel MOSFET | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
FDMS86310
N-Channel PowerTrench® MOSFET
80 V, 50 A, 4.8 mΩ
Features
Max rDS(on) = 4.8 mΩ at VGS = 10 V, ID = 17 A
Max rDS(on) = 6.7 mΩ at VGS = 8 V, ID = 14 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology,
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
January 2012
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
Primary Switch
Synchronous Rectifier
Motor Switch
Top
Pin 1
Bottom
Pin 1
S
S
S
G
Power 56
D
D
D
D
S
S
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
80
±20
50
105
17
100
183
96
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.3
50
°C/W
Device Marking
FDMS86310
Device
FDMS86310
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS86310 Rev. C
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 7 | ||
Télécharger | [ FDMS86310 ] |
No | Description détaillée | Fabricant |
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