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PDF FDMS86250 Data sheet ( Hoja de datos )
| Número de pieza | FDMS86250 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDMS86250
N-Channel PowerTrench® MOSFET
150 V, 20 A, 25 mΩ
Features
Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 6.7 A
Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.8 A
Advanced package and silicon combination for low rDS(on) and
high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
December 2011
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
DC-DC Conversion
Top Bottom
Pin 1
S
S
S
G
S
S
Power 56
D
D
DD
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
150
±20
20
42
6.7
50
180
96
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.3
50
°C/W
Device Marking
FDMS86250
Device
FDMS86250
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMS86250 Rev. C
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 125 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.001
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2011 Fairchild Semiconductor Corporation
FDMS86250 Rev. C
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMS86250.PDF ] | |
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