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FDMS86201 fiches techniques PDF

Fairchild Semiconductor - N-Channel MOSFET

Numéro de référence FDMS86201
Description N-Channel MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDMS86201 fiche technique
Preliminary Datasheet
April 2010
FDMS86201
N-Channel PowerTrench® MOSFET
120 V, 35 A, 11.5 m:
Features
General Description
„ Max rDS(on) = 11.5 m: at VGS = 10 V, ID = 11.6 A
„ Max rDS(on) = 14.5 m: at VGS = 6 V, ID = 10.7 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ MSL1 robust package design
„ 100% UIL tested
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
„ DC-DC Conversion
„ RoHS Compliant
Top Bottom
Pin 1
S
S
S
G
D5
D6
4G
3S
Power 56
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
D7
D8
(Note 1a)
(Note 3)
(Note 1a)
2S
1S
Ratings
120
±20
35
65
11.6
160
264
104
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.2
50
°C/W
Device Marking
FDMS86201
Device
FDMS86201
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
FDMS86201 Rev.C
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

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