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2SA1096 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Panasonic Semiconductor - Silicon NPN epitaxial planar type(For low-frequency power amplification)

شماره قطعه 2SA1096
شرح مفصل Silicon NPN epitaxial planar type(For low-frequency power amplification)
تولید کننده Panasonic Semiconductor 
آرم Panasonic Semiconductor 


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2SA1096 شرح
Power Transistors
2SC2497, 2SC2497A
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SA1096 and 2SA1096A
8.0+00..15
φ 3.16±0.1
Unit: mm
3.2±0.2
I Features
High collector to emitter voltage VCEO
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector to base voltage
Collector to
emitter voltage
2SC2497
2SC2497A
VCBO
VCEO
70
50
60
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
VEBO
ICP
IC
PC
5
3
1.5
1.2 *1
5 *2
Junction temperature
Storage temperature
Tj 150
Tstg 55 to +150
Note) *1: Without heat sink
*2: With a 100 × 100 × 2 mm A1 heat sink
Unit
V
V
V
A
A
W
°C
°C
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
1 : Emitter
123
2 : Collector
3 : Base
TO-126B-A1 Package
I Electrical Characteristics TC = 25°C
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter
voltage
2SC2497
2SC2497A
ICBO
ICEO
IEBO
VCBO
VCEO
VCB = 20 V, IE = 0
VCE = 10 V, IB = 0
VEB = 5 V, IC = 0
IC = 1 mA, IE = 0
IC = 2 mA, IB = 0
Forward current transfer ratio *
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
hFE
VCE(sat)
VBE(sat)
fT
Cob
VCE = 5 V, IC = 1 A
IC = 1.5 A, IB = 0.15 A
IC = 1.5 A, IB = 0.15 A
VCB = 5 V, IE = 0.5 A, f = 200 MHz
VCB = 20 V, IE = 0, f = 1 MHz
Note) *: Rank classification
Rank
R
S
hFE 80 to 160 120 to 220
Min
70
50
60
80
Typ Max
1
100
10
220
1
1.5
150
35
Unit
µA
µA
µA
V
V
V
V
MHz
pF
188

قانون اساسیصفحه 4
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