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Samsung - 128K x 36 Synchronous SRAM

Numéro de référence K7A403600M
Description 128K x 36 Synchronous SRAM
Fabricant Samsung 
Logo Samsung 





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K7A403600M fiche technique
K7A403600M
128Kx36 Synchronous SRAM
Document Title
128Kx36-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
1.0
2.0
3.0
History
Draft Date
Remark
Initial draft
May . 15. 1997
Preliminary
Change 7.5 bin to 7.2
January . 13 . 1998 Preliminary
Change speed symbol 6.0/6.7/7.2/8.5 to 60/67/72/85
February. 02. 1998 Preliminary
Change DC characteristics VDD condition from VDD=3.3V+10%/-5% Change
Input/output leackage currant for ±1µA to ±2µA
Modify Read timing & Power down cycle timing.
Change ISB2 value from 30mA to 20mA.
Remove DC characteristics ISB1 - L ver.& ISB2 - L ver .
February. 12. 1998
Preliminary
Remove Low power version.
Add 119BGA(7x17 Ball Grid Array Package)
March. 11 . 1998
Preliminary
Change Undershoot spec
from -3.0V(pulse width20ns) to -2.0V(pulse widthtCYC/2)
Add Overshoot spec 4.6V((pulse widthtCYC/2)
Change VIH max from 5.5V to VDD+0.5V
April. 14. 1998
Preliminary
Change ISB2 value from 20mA to 30mA.
May.13. 1998
Change VDD condition from VDD=3.3V+10%/-5% to VDD=3.3V+0.3V/-0.165V.
http://www.DataSheet4U.com/
Modify DC characteristics( Input Leakage Current test Conditions)
form VDD=VSS to VDD to Max.
May.14.1998
Preliminary
Preliminary
Final spec Release
May. 15. 1998
Final
Add VDDQ Supply voltage( 2.5V )
Dec. 02. 1998
Final
Remove 119BGA(7x17 Ball Grid Array Package) .
Nov. 26. 1999
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
- 1 - November 1999
Rev 3.0
This datasheet has been downloaded from http://www.digchip.com at this page

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