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PDF UF830Z Data sheet ( Hoja de datos )
| Número de pieza | UF830Z | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de UF830Z (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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UNISONIC TECHNOLOGIES CO., LTD
UF830Z
4.5A, 500V, 1.5Ω, N-CHANNEL
POWER MOSFET
Power MOSFET
DESCRIPTION
The N-Channel enhancement mode silicon gate power MOSFET is
designed for high voltage, high speed power switching applications, such as
switching regulators, switching converters, solenoid, motor drivers and
related drivers.
FEATURES
* VDS = 500V
* ID = 4.5A
* RDS(ON)=1.5Ω
* Single Pulse Avalanche Energy Rated
* Rugged- SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* ESD Protected
SYMBOL
2.Drain
http://www.DataSheet4U.net/
1
TO-220F
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF830ZL-TF3-T
UF830ZG-TF3-T
Package
TO-220F
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-612.A
1 page  
UF830Z
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
tON
tDLY(ON)
tR
90%
Power MOSFET
tOFF
tDLY(OFF)
tF
90%
0
VGS
0 10%
10%
50%
PULSE WIDTH
10%
90%
50%
FIG 4. Resistive Switching Waveforms
http://www.DataSheet4U.net/
FIG 5. Gate Charge Test Circuit
FIG 6. Gate Charge Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 8
QW-R502-612.A
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UF830Z.PDF ] | |
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