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What is PCFMB400E6?

This electronic component, produced by the manufacturer "Nihon", performs the same function as "IGBT ( Insulated Gate Bipolar Transistor )".


PCFMB400E6 Datasheet PDF - Nihon

Part Number PCFMB400E6
Description IGBT ( Insulated Gate Bipolar Transistor )
Manufacturers Nihon 
Logo Nihon Logo 


There is a preview and PCFMB400E6 download ( pdf file ) link at the bottom of this page.





Total 4 Pages



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No Preview Available ! PCFMB400E6 datasheet, circuit

IGBT Module-Chopper
400A,600V
PCFMB400E6
□ 回 路 図 : CIRCUIT
(C2E1)
1
(E2)
2
(C1)
3
5(E1)
4(G1)
□ 外 形 寸 法 図 : OUTLINE DRAWING
3-M6
108
93 ±0.25
14 11 14 11 14
4-Ø 6.5
123
5
4
25 25 24
16 9 16 9 16
LABEL
Dimension:[mm]
□ 最 大 定 格 : MAXIMUM RATINGS (T=25℃)
Item
コレクタ・エミッタ間電圧
Collector-Emitter Voltage
ゲ ー ト・エ ミ ッ タ 間 電 圧
Gate-Emitter Voltage
コレクタ電流
Collector Current
コレクタ損失
Collector Power Dissipation
DC
1ms
Symbol
CES
GES
CP
Rated Value
600
±20
400
800
1470
Unit
接合温度
Junction Temperature Range
-40~+150
保存温度
Storage Temperature Range
stg
http://www.DataSheet4U.net/
-40~+125
絶 縁 耐 圧(Terminal to Base AC,1minute)
Isolation Voltage
締 め 付 け ト ル ク Module Base to Heatsink
Mounting Torque
Busbar to Main Terminal
ISO
tor
2,500
3(30.6)
(RMS)
N・m
(kgf・cm)
□ 電 気 的 特 性 : ELECTRICAL CHARACTERISTICS (T=25℃)
Characteristic
コレクタ遮断電流
Collector-Emitter Cut-Off Current
ゲート漏れ電流
Gate-Emitter Leakage Current
Symbol Test Condition
CES
CE= 600V,VGE= 0V
GES
GE= ±20V,VCE= 0V
Min.
Typ.
Max. Unit
1.0
mA
- - 1.0 μA
コレクタ・エミッタ間飽和電圧
Collector-Emitter Saturation Voltage
CE(sat) = 400A,VGE= 15V
2.1 2.6
ゲ ー ト しきい値電圧
Gate-Emitter Threshold Voltage
GE(th)
CE= 5V,I= 400mA
4.0
8.0
入力容量
Input Capacitance
スイッチング時間
Switching Time
上昇時間
ターンオン時間
下降時間
ターンオフ時間
Rise Time
Turn-on Time
Fall Time
Turn-off Time
ies
on
off
CE= 10V,VGE= 0V,f= 1MH
CC= 300V
= 0.75Ω
= 3.0Ω
GE= ±15V
- 20,000 -
pF
- 0.15 0.35
0.30 0.85
0.10 0.25
μs
- 0.40 0.80
□フリーホイーリングダイオードの 特 性: FREE WHEELING DIODE RATINGS & CHARACTERISTICS(T=25℃)
順電流
Forward Current
Item
DC
1ms
Symbol
FM
Rated Value
400
800
Unit
Characteristic
順電圧
Peak Forward Voltage
逆回復時間
Reverse Recovery Time
Symbol Test Condition
rr
= 400A,VGE= 0V
= 400A,VGE= -10V
di/dt= 800A/μs
□ 熱 的 特 性 : THERMAL CHARACTERISTICS
Characteristic
熱抵抗
IGBT
Thermal Impedance
Diode
Symbol Test Condition
Rth(j-c)
Junction to Case
(Tc測定点チップ直下)
日本インター株式会社
Min.
Typ.
1.9
Max. Unit
2.4
- 0.15 0.25 μs
Min.
Typ.
Max.
0.085
0.20
Unit
℃/W
00


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for PCFMB400E6 electronic component.


Information Total 4 Pages
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Download [ PCFMB400E6.PDF Datasheet ]

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Featured Datasheets

Part NumberDescriptionMFRS
PCFMB400E6The function is IGBT ( Insulated Gate Bipolar Transistor ). NihonNihon

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