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Número de pieza | TC2282 | |
Descripción | Low Noise Ceramic Packaged PHEMT GaAs FETs | |
Fabricantes | Transcom | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TC2282 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Low Noise Ceramic Packaged PHEMT GaAs FETs
TC2282
REV3_20070504
FEATURES
PHOTO ENLARGEMENT
• 0.5 dB Typical Noise Figure at 12 GHz
• High Associated Gain: Ga = 12 dB Typical at 12 GHz
• Lg = 0.25 µm, Wg = 300 µm
• Tight Vp ranges control
• High RF input power handling capability
• 100 % DC Tested
• Micro-X Metal Ceramic Package
DESCRIPTION
The TC2282 is a high performance field effect transistor housed in a ceramic micro-x package with TC1202
PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device
suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (TA=25 °C)
Symbol
CONDITIONS
MIN
TYP
MAX
UNIT
NF
Ga
IDSS
gm
VP
BVDGO
Noise Figure at VDS = 4 V, IDS = 25 mA, f = 12GHz
Associated Gain at VDS = 4 V, IDS = 25 mA, f = 12GHz
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
Transconductance at VDS = 2 V, VGS = 0 V
Pinch-off Voltage at VDS = 2 V, ID = 0.6mA
Drain-Gate Breakdown Voltage at IDGO = 0.15mA
http://www.DataSheet4U.net/
0.5 0.7 dB
11 12
dB
90 mA
100 mS
-1.0*
Volts
59
Volts
Rth Thermal Resistance
150 °C/W
ABSOLUTE MAXIMUM RATINGS (TA=25 °C)
Symbol
VDS
VGS
IDS
IGS
Pin
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Rating
5.0 V
-3.0 V
IDSS
300 µA
20 dBm
400 mW
175 °C
- 65 °C to +175 °C
TYPICAL NOISE PARAMETERS (TA=25 °C)
VDS = 4 V, IDS = 25 mA
Frequency NFopt
GA
Γopt Rn/50
MAG ANG
2 0.33 26.0 0.76 40 0.38
4 0.37 20.1 0.67 78 0.31
6 0.41 16.7 0.60 110 0.24
8 0.46 14.3 0.55 136 0.20
10 0.52 12.7 0.50 162 0.16
12 0.56 11.7 0.46 188 0.14
14 0.68 11.1 0.43 -143 0.14
16 0.80 10.9 0.40 -109 0.14
18 0.98 10.8 0.37 -67 0.16
* For the tight control of the pinch-off voltage range, we divide TC2282 into 3 model numbers to fit customer design requirement
(1)TC2282P0710 : Vp = -0.7V to -1.0V (2)TC2282P0811 : Vp = -0.8V to -1.1V (3)TC2282P0912 : Vp = -0.9V to -1.2V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/3
datasheet pdf - http://www.DataSheet4U.net/
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet TC2282.PDF ] |
Número de pieza | Descripción | Fabricantes |
TC2281 | Low Noise and High Dynamic Range Packaged GaAs FETs | Transcom |
TC2282 | Low Noise Ceramic Packaged PHEMT GaAs FETs | Transcom |
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