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PDF TC2211 Data sheet ( Hoja de datos )
| Número de pieza | TC2211 | |
| Descripción | Plastic Packaged Low Noise PHEMT GaAs FETs | |
| Fabricantes | Transcom | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TC2211 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Plastic Packaged Low Noise PHEMT GaAs FETs
TC2211
REV4_20070504
FEATURES
• 1.5 dB Typical Noise Figure at 12 GHz
• High Associated Gain: Ga = 6.5 dB Typical at 12 GHz
• 21.5 dBm Typical Power at 12 GHz
• 7.5 dB Typical Linear Power Gain at 12 GHz
• Lg = 0.25 µm, Wg = 300 µm
• Tight Vp ranges control
• High RF input power handling capability
• 100 % DC Tested
• Low Cost Plastic SOT143 Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC2211 is a high performance field effect transistor housed in a plastic package with TC1201
PHEMT Chip. Its low noise figure makes this device suitable for use in low noise amplifiers. All devices
are 100 % DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (TA=25 °C)
Symbol
CONDITIONS
MIN
TYP
MAX
UNIT
NF Noise Figure at VDS = 4 V, IDS = 25 mA, f = 12GHz
http://www.DataSheet4U.net/
Ga Associated Gain at VDS = 4 V, IDS = 25 mA, f = 12GHz
1.5 2 dB
5.5 6.5
dB
P1dB Output Power at 1dB Gain Compression Point, f = 12GHz VDS = 6 V, IDS = 40 mA 20.5
21.5
dBm
GL Linear Power Gain, f = 12GHz VDS = 6 V, IDS = 40 mA
6.5 7.5
dB
IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
90 mA
gm Transconductance at VDS = 2 V, VGS = 0 V
100 mS
VP Pinch-off Voltage at VDS = 2 V, ID = 0.6mA
-1.0*
Volts
BVDGO Drain-Gate Breakdown Voltage at IDGO = 0.15mA
9 12
Volts
Rth Thermal Resistance
150 °C/W
ABSOLUTE MAXIMUM RATINGS (TA=25 °C)
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Rating
7.0 V
-3.0 V
* For the tight control of the pinch-off voltage range, we divide
TC2211 into 3 model numbers to fit customer design
requirement
(1) TC2211P0710 : Vp = -0.7V to -1.0V
IDS Drain Current
IGS Gate Current
Pin RF Input Power, CW
PT Continuous Dissipation
TCH Channel Temperature
IDSS
300 µA
21 dBm
400 mW
175 °C
(2) TC2211P0811 : Vp = -0.8V to -1.1V
(3) TC2211P0912 : Vp = -0.9V to -1.2V
If required, customer can specify the requirement in purchasing
document. For special Vp requirement, please contact factory for
details.
TSTG
Storage Temperature
- 65 °C to +175 °C
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/4
datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet TC2211.PDF ] | |
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