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M58BW032DT fiches techniques PDF

STMicroelectronics - 32 Mbit 3.3V Supply Flash Memory

Numéro de référence M58BW032DT
Description 32 Mbit 3.3V Supply Flash Memory
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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M58BW032DT fiche technique
M58BW032BT, M58BW032BB
M58BW032DT, M58BW032DB
32 Mbit (1Mb x32, Boot Block, Burst)
3.3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY
SUPPLY VOLTAGE
– VDD = 3.0V to 3.6V for Program, Erase
and Read
– VDDQ = VDDQIN = 1.6V to 3.6V for I/O
Buffers
HIGH PERFORMANCE
– Access Time: 45, 55 and 60ns
– 75MHz Effective Zero Wait-State Burst
Read
– Synchronous Burst Reads
– Asynchronous Page Reads
MEMORY ORGANIZATION
– Eight 64 Kbit small parameter Blocks
– Four 128Kbit large parameter Blocks (of
which one is OTP)
– Sixty-two 512Kbit main Blocks
HARDWARE BLOCK PROTECTION
– WP pin Lock Program and Erase
– VPEN signal for Program/Erase Enable
SOFTWARE BLOCK PROTECTION
– Tuning Protection to Lock Program and
Erase with 64-bit User Programmable
Password (M58BW032B version only)
SECURITY
– 64-bit Unique Device Identifier (UID)
FAST PROGRAMMING
– Write to Buffer and Program capability
OPTIMIZED FOR FDI DRIVERS
– Common Flash Interface (CFI)
– Fast Program/Erase Suspend feature in
each block
LOW POWER CONSUMPTION
– 100µA Typical Standby
Figure 1. Packages
PQFP80 (T)
BGA
http://www.DataSheet4U.net/
LBGA80 (ZA)
10 x 8 ball array
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code M58BW032xT: 8838h
– Bottom Device Code M58BW032xB:
8837h
OPERATING TEMPERATURE RANGE
– Automotive (Grade 3): 40 to 125°C
– Industrial (Grade 6): 40 to 90°C
November 2004
1/60
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
datasheet pdf - http://www.DataSheet4U.net/

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