K4A60DA Datasheet PDF - Toshiba
| Part Number | K4A60DA | |
| Description | 600V, 3.5A, N-Channel MOSFET, TK4A60DA | |
| Manufacturers | Toshiba | |
| Logo |  |
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The K4A60DA is manufactured by several companies, including Toshiba, and has a maximum voltage rating of 600 volts and a maximum current rating of 3.5 amperes. It is commonly used in electronic circuits for power supply circuits, audio amplifiers, and other applications that require switching or amplification of high voltages and currents. It is important to note that the K4A60DA transistor must be used with proper circuit design and precautions to ensure safe and reliable operation. Improper use or handling of the transistor can result in damage to the device or other components in the circuit. There is a preview and K4A60DA download ( pdf file ) link at the bottom of this page. Total 6 Pages | ||
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TK4A60DA
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK4A60DA
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)
• Low leakage current: IDSS = 10 μA (VDS = 600 V)
• Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
600
±30
3.5
14
35
158
3.5
3.5
http://www.DataSheet4U.net/
150
−55 to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
JEDEC
⎯
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Internal Connection
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max
3.57
62.5
Unit
°C/W
°C/W
2
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 22.5 mH, RG = 25 Ω, IAR = 3.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
3
1 2008-12-05
datasheet pdf - http://www.DataSheet4U.net/
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TK4A60DA
rth – tw
10
1 Duty=0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.001
10μ
100μ
SINGLE PULSE
PDM
t
T
Duty = t/T
Rth (ch-c) = 3.57°C/W
1m
10m
100m
PULSE WIDTH tw (s)
1
10
SAFE OPERATING AREA
100
ID max (pulsed) *
10
ID max (continuous) *
1 DC operation
Tc = 25°C
100 μs *
1 ms *
0.1
0.01
*: SINGLE NONREPETITIVE
PULSE Tc = 25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.
0.001
0.1 1 10
VDSS max
100
1000
DRAIN-SOURCE VOLTAGE VDS (V)
EAS – Tch
200
160
120
http://www.DataSheet4U.net/
80
40
0
25 50 75 100 125 150
CHANNEL TEMPEATURE (INITIAL) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVEFORM
RG = 25 Ω
VDD = 90 V, L = 22.5 mH
ΕAS
=
1
2
⋅L ⋅I2
⋅
⎜⎛
⎜⎝
BVDSS
BVDSS − VDD
⎟⎞
⎟⎠
5 2008-12-05
datasheet pdf - http://www.DataSheet4U.net/
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for K4A60DA electronic component. |
| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Product Image and Detail view |  1. - 500V, 13A, MOSFET, Transistor [ Learn More ] | |
| Download | [ K4A60DA.PDF Datasheet ] | |
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