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Número de pieza | 2N7373 | |
Descripción | Complimentary Power Transistors in Hermetic Isolated TO-254AA Packages | |
Fabricantes | Microsemi Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N7373 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! 7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
APPLICATIONS:
• Power Supply
• Inverters and Converters
• General Purpose Amplifiers
FEATURES:
• Planar Process for Reliability
• Fast Switching
• High-Frequency Power Transistors
• For Complementary Use with Each Other
• 15 mj Reverse Energy Rating with IC = 10MA and 4 V Reverse Bias
• Similar to 2N5004 and 2N5005 but JEDEC TO-254AA Package
• Leads can be Formed
• All Terminals Isolated from the Case
2N7372 - PNP
2N7373 - NPN
Complimentary
Power Transistors
in Hermetic Isolated
TO-254AA Packages
JAN/TX/TXV/JANS
DESCRIPTION:
These power transistors are produced by PPC's MULTIPLE DIFFUSED
PLANAR process. This technology produces high voltage devices with
excellent switching speeds, frequency response, gain linearity, saturation
voltages, high current gain, and safe operating areas. These devices have
excellent unclamped and clamped reverse energy ratings with the base to
emitter reversed biased.
Ultrasonically bonded wire leads and gold eutectic die bonding are utilized to
permit operating temperature to 200°C. The hermetically sealed package
insures maximum reliability and long life. The isolated low profile package
allows for easy PC board fit.
TO-254AA
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
CHARACTERISTIC
VCBO
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Continuous Collector Current
IC Peak Collector Current
IB Continuous Base Current
T STG
TJ
Storage Temperature
Operating Junction Temperature
Lead Temperature 1/16" from cast for 10 sec.
Unclamped Inductive Load Energy
PT Continuous Device
Dissipation TC = 25° C
TC = 100° C
θ JC
Thermal Resistance Junction to Case
2N7372
2N7373
- 100
100
- 80 80
- 5.5
5.5
55
10 10
22
-65 to 200
-65 to 200
300
15
58 58
33 33
33
UNITS
V
V
V
A
A
A
°C
°C
°C
mj
W
W
° C/W
MSC1343.PDF 010-29-99
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 2N7373.PDF ] |
Número de pieza | Descripción | Fabricantes |
2N7370 | NPN DARLINGTON HIGH POWER SILICON TRANSISTOR | Microsemi |
2N7371 | PNP DARLINGTON HIGH POWER SILICON TRANSISTOR | Microsemi Corporation |
2N7371 | Trans Darlington PNP 100V 12A 3-Pin(3+Tab) TO-254 | New Jersey Semiconductor |
2N7372 | Complimentary Power Transistors in Hermetic Isolated TO-254AA Packages | Microsemi Corporation |
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