DataSheetWiki


2N7002LT3G fiches techniques PDF

ON Semiconductor - Small Signal MOSFET 60 V/ 115 mA/ N−Channel SOT−23

Numéro de référence 2N7002LT3G
Description Small Signal MOSFET 60 V/ 115 mA/ N−Channel SOT−23
Fabricant ON Semiconductor 
Logo ON Semiconductor 





1 Page

No Preview Available !





2N7002LT3G fiche technique
2N7002L
Small Signal MOSFET
60 V, 115 mA, N−Channel SOT−23
Features
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain−Source Voltage
Drain−Gate Voltage (RGS = 1.0 MW)
Drain Current
− Continuous TC = 25°C (Note 1)
− Continuous TC = 100°C (Note 1)
− Pulsed (Note 2)
VDSS
VDGR
ID
ID
IDM
60
60
± 115
± 75
± 800
Vdc
Vdc
mAdc
Gate−Source Voltage
− Continuous
− Non−repetitive (tp 50 ms)
VGS ± 20 Vdc
VGSM ± 40 Vpk
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 3) TA = 25°C
Derate above 25°C
PD 225 mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 4) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
mW/°C
2.4
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RqJA
TJ, Tstg
417
−55 to
+150
°C/W
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
3. FR−5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
http://onsemi.com
V(BR)DSS
60 V
RDS(on) MAX
7.5 W @ 10 V,
500 mA
N−Channel
3
ID MAX
115 mA
1
3
1
2
SOT−23
CASE 318
STYLE 21
702
W
2
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
702
W
1
Gate
= Device Code
= Work Week
2
Source
ORDERING INFORMATION
Device
Package
Shipping
2N7002LT1
2N7002LT3
SOT−23
3000 Tape & Reel
10,000 Tape & Reel
2N7002LT1G
2N7002LT3G
3000 Tape & Reel
SOT−23
(Pb−free) 10,000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 2
1
Publication Order Number:
2N7002L/D

PagesPages 4
Télécharger [ 2N7002LT3G ]


Fiche technique recommandé

No Description détaillée Fabricant
2N7002LT3 Small Signal MOSFET 115 mAmps/ 60 Volts Leshan Radio Company
Leshan Radio Company
2N7002LT3 Small Signal MOSFET 60 V/ 115 mA/ N−Channel SOT−23 ON Semiconductor
ON Semiconductor
2N7002LT3G Small Signal MOSFET 60 V/ 115 mA/ N−Channel SOT−23 ON Semiconductor
ON Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche