(PDF) 2N7002CSM Datasheet - N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

Número de pieza	2N7002CSM
Descripción	N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR
Fabricantes	Seme LAB
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No Preview Available ! 2N7002CSM MECHANICAL DATA Dimensions in mm (inches) 0.51 ± 0.10 (0.02 ± 0.004) 3 0.31 (0.012) rad. 21 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) 0.31 (0.012) rad. A = 1.02 ± 0.10 (0.04 ± 0.004) A 1.40 (0.055) max. SOT23 CERAMIC (LCC1 PACKAGE) Underside View PAD 1 – Gate PAD 2 – Source PAD 3 – Drain N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR FEATURES • V(BR)DSS = 60V • RDS(ON) = 7.5Ω • ID = 0.115A ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated) VDS Drain – Source Voltage 60V VGS Gate – Source Voltage ±40V ID Drain Current @ TCASE = 25°C ±0.115A ID Drain Current @ TCASE = 100°C ±0.073A IDM Pulsed Drain Current * 0.8A PD Power Dissipation @ TCASE = 25°C 200mW PD Power Dissipation @ TCASE = 100°C 80mW Tj Operating Junction Temperature Range –55 to 150°C Tstg Storage Temperature Range –55 to 150°C * Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected] Website http://www.semelab.co.uk Prelim. 7/98 1 page

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PDF 2N7002CSM Data sheet ( Hoja de datos )