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PDF H926 Data sheet ( Hoja de datos )
| Número de pieza | H926 | |
| Descripción | PNP SILICON TRANSISTOR | |
| Fabricantes | SHANTOU HUASHAN ELECTRONIC DEVICES | |
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Hay una vista previa y un enlace de descarga de H926 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H926
█ POWER SUPPLIES，RELAY DRIVERS，
LAMP DRIVERS，ELECTRICAL EQUIPMENT
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………750mW
VCBO——Collector-Base Voltage………………………………-30V
VCEO——Collector-Emitter Voltage……………………………-25V
VEBO——Emitter-Base Voltage………………………………-6V
IC——Collector Current……………………………………-2A
TO-92
1―Emitter，E
2―Collector，C
3―Base，B
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Characteristics
BVCBO Collector-Base Breakdown Voltage
BVCEO Collector-Emitter Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
HFE(1) DC Current Gain
HFE(2)
VCE(sat) Collector- Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
fT Current Gain-Bandwidth Product
Cob Output Capacitance
* pulse
█ hFE Classification
Min Typ Max Unit
Test Conditions
http://www.DataSheet4U.net/
-30
V IC=-10μA, IE=0
-25 V IC=-1mA, IB=0
-6 V IE=-10μA，IC=0
100 560 VCE=-2V, IC=-100mA
65 130
VCE=-2V, IC=-1.5A *
-0.35 -0.6 V IC=-1.5A, IB=-75mA *
-0.85 -1.2 V IC=-1.5A, IB=-75mA *
-100 nA VCB=-20V, IE=0
-100 nA VEB=-4V, IC=0
150 MHz VCE=-10V, IC=-50mA
32 pF VCB=-10V, IE=0，f=1MHz
R
100—200
S
140—280
T
200—400
U
280—560
datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet H926.PDF ] | |
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