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PDF 2N7002-01 Data sheet ( Hoja de datos )
| Número de pieza | 2N7002-01 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
| Fabricantes | Diodes Incorporated | |
| Logotipo |  |
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2N7002-01
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
· Low On-Resistance: RDS(ON)
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Low Input/Output Leakage
Mechanical Data
· Case: SOT-23, Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking: K7A
· Weight: 0.008 grams (approx.)
A
D
TOP VIEW
BC
GS
ED
G
H
K
J
L
SOT-23
Dim Min Max
A 0.37 0.51
B 1.19 1.40
C 2.10 2.50
D 0.89 1.05
E 0.45 0.61
G 1.78 2.05
H 2.65 3.05
J 0.013 0.15
M
K 0.89 1.10
L 0.45 0.61
M 0.076 0.178
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS £ 1.0MW
Gate-Source Voltage
Continuous
Pulsed
Drain Current (Note 1)
Continuous
Continuous @ 100°C
Pulsed
Total Power Dissipation (Note 1)
Derating above TA = 25°C
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
VDSS
VDGR
VGSS
ID
Pd
RqJA
Tj, TSTG
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width £ 300ms, duty cycle £ 2%.
Value
60
60
±20
±40
115
73
800
200
1.60
625
-55 to +150
Units
V
V
V
mA
mW
mW/°C
K/W
°C
DS30026 Rev. C-5
1 of 3
2N7002-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N7002-01.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| 2N7002-01 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
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