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General Semiconductor - DMOS Transistors (N-Channel)

Numéro de référence 2N7002
Description DMOS Transistors (N-Channel)
Fabricant General Semiconductor 
Logo General Semiconductor 





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2N7002 fiche technique
2N7002
DMOS Transistors (N-Channel)
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
Top View
12
.037(0.95) .037(0.95)
FEATURES
High input impedance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No minority carrier storage time
CMOS logic compatible input
No thermal runaway
No secondary breakdown
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Pin configuration
1 = Gate, 2 = Source, 3 = Drain
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
Marking
S72
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source-Voltage (pulsed)
Drain Current (continuous)
Power Dissipation at TC = 50 °C
Junction Temperature
Storage Temperature Range
1) Ceramic Substrate 0.7mm; 2.5 cm2 area.
Symbol
VDSS
VDGS
VGS
ID
Ptot
Tj
TS
Value
60
60
±20
250
0.3101)
150
–55 to +150
Inverse Diode
Max. Forward Current (continuous)
at Tamb = 25 °C
Forward Voltage Drop (typ.)
at VGS = 0, IF = 0.3 A, Tj = 25 °C
Symbol
IF
VF
Value
0.3
0.85
4/98
Unit
V
V
V
mA
W
°C
°C
Unit
A
V

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