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Numéro de référence | 2N7002 | ||
Description | DMOS Transistors (N-Channel) | ||
Fabricant | General Semiconductor | ||
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1 Page
2N7002
DMOS Transistors (N-Channel)
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
Top View
12
.037(0.95) .037(0.95)
FEATURES
♦ High input impedance
♦ High-speed switching
♦ No minority carrier storage time
♦ CMOS logic compatible input
♦ No minority carrier storage time
♦ CMOS logic compatible input
♦ No thermal runaway
♦ No secondary breakdown
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Pin configuration
1 = Gate, 2 = Source, 3 = Drain
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
Marking
S72
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source-Voltage (pulsed)
Drain Current (continuous)
Power Dissipation at TC = 50 °C
Junction Temperature
Storage Temperature Range
1) Ceramic Substrate 0.7mm; 2.5 cm2 area.
Symbol
VDSS
VDGS
VGS
ID
Ptot
Tj
TS
Value
60
60
±20
250
0.3101)
150
–55 to +150
Inverse Diode
Max. Forward Current (continuous)
at Tamb = 25 °C
Forward Voltage Drop (typ.)
at VGS = 0, IF = 0.3 A, Tj = 25 °C
Symbol
IF
VF
Value
0.3
0.85
4/98
Unit
V
V
V
mA
W
°C
°C
Unit
A
V
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Pages | Pages 5 | ||
Télécharger | [ 2N7002 ] |
No | Description détaillée | Fabricant |
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