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PDF NGTB40N120LWG Data sheet ( Hoja de datos )
| Número de pieza | NGTB40N120LWG | |
| Descripción | IGBT | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NGTB40N120LWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications. Offering
both low on−state voltage and minimal switching loss, the IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged co−packaged free wheeling diode with a
low forward voltage.
Features
• Low Saturation Voltage using Trench with Field Stop Technology
• Low Switching Loss Reduces System Power Dissipation
• Low Gate Charge
• 5 ms Short−Circuit Capability
• These are Pb−Free Devices
Typical Applications
• Inverter Welding Machines
• Microwave Ovens
• Industrial Switching
• Motor Control Inverter
ABSOLUTE MAXIMUM RATINGS
Rating
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Symbol
VCES
IC
Value
1200
80
40
Unit
http://www.DataSheet4U.net/
V
A
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
ICM 320 A
IF A
80
40
Diode pulsed current, Tpulse limited
by TJmax
Gate−emitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
IFM
VGE
PD
320
$20
260
104
A
V
W
Short−Circuit Withstand Time
VGE = 15 V, VCE = 600 V, TJ ≤ 150°C
Operating junction temperature range
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tsc
TJ
Tstg
TSLD
5
−55 to +150
−55 to +150
260
ms
°C
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
40 A, 1200 V
VCEsat = 1.90 V
Eoff = 1.40 mJ
C
G
E
G
CE
TO−247
CASE 340L
STYLE 4
MARKING DIAGRAM
40N120L
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTB40N120LWG
Package Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1
Publication Order Number:
NGTB40N120L/D
datasheet pdf - http://www.DataSheet4U.net/
1 page  
NGTB40N120LWG
TYPICAL CHARACTERISTICS
18
VCE = 600 V
15
VGE = 15 V
IC = 40 A
TJ = 150°C
12
Eon
9
6 Eoff
3
0
5 15 25 35 45 55 65 75
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
10,000
1000
100
10
1
85 5
td(off)
tf
td(on)
tr
VCE = 600 V
VGE = 15 V
IC = 40 A
TJ = 150°C
15 25 35 45 55 65 75
Rg, GATE RESISTOR (W)
Figure 14. Switching Time vs. Rg
85
12
10
VGE = 15 V
IC = 40 A
Rg = 10 W
8 TJ = 150°C
6
Eon
1000
100
td(off)
tf
td(on)
tr
4 Eoff
2
0
375 425 475 525 575 625 675 725
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
775
10
http://www.DataSheet4U.net/
VGE = 15 V
IC = 40 A
Rg = 10 W
TJ = 150°C
1
375 425 475
525
575
625
675
725 775
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Switching Time vs. VCE
1000
100
10
1 ms
dc operation
100 ms
50 ms
1 Single Nonrepetitive
Pulse TC = 25°C
0.1
Curves must be derated
linearly with increase
in temperature
0.01
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
1000
100
10
VGE = 15 V, TC = 125°C
1
1 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 18. Reverse Bias Safe Operating Area
http://onsemi.com
5
datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet NGTB40N120LWG.PDF ] | |
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