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NTR3A30PZ fiches techniques PDF

ON Semiconductor - Single P-Channel Power MOSFET

Numéro de référence NTR3A30PZ
Description Single P-Channel Power MOSFET
Fabricant ON Semiconductor 
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NTR3A30PZ fiche technique
NTR3A30PZ
Power MOSFET
20 V, 2.9 A, Single PChannel
2.4 x 2.9 x 1.0 mm SOT23 Package
Features
Low RDS(on) Solution in 2.4 mm x 2.9 mm Package
ESD DiodeProtected Gate
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
High Side Load Switch
Battery Switch
Optimized for Power Management Applications for Portable
Products, such as Smart Phones, Media Tablets, PMP, DSC, GPS, and
Others
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Drain Current (Note 1)
Drain Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t5s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
20
±8
2.9
2.1
4.7
0.48
V
V
A
http://www.DataSheet4U.net/
W
t5s
1.25
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
ESD HBM, JESD22A114
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
IDM
TJ,
TSTG
VESD
IS
TL
8.8
55 to
150
2000
0.48
260
A
°C
V
A
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
JunctiontoAmbient – Steady State (Note 1)
RqJA
JunctiontoAmbient – t 5 s (Note 1)
RqJA
1. Surfacemounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
2. Pulse Test: pulse width 300 ms, duty cycle 2%.
260 °C/W
100
http://onsemi.com
V(BR)DSS
20 V
RDS(on) Max
38 mW @ 4.5 V
50 mW @ 2.5 V
73 mW @ 1.8 V
ID MAX
2.9 A
PChannel MOSFET
D3
G
1
S2
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain
3
SOT23
CASE 318
STYLE 21
TRH M G
G
1
Gate
2
Source
TRH = Specific Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
NTR3A30PZT1G SOT23
(PbFree)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
April, 2013 Rev. 0
1
Publication Order Number:
NTR3A30PZ/D
datasheet pdf - http://www.DataSheet4U.net/

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