DataSheetWiki


2N6976 fiches techniques PDF

Intersil Corporation - 5A/ 400V and 500V N-Channel IGBTs

Numéro de référence 2N6976
Description 5A/ 400V and 500V N-Channel IGBTs
Fabricant Intersil Corporation 
Logo Intersil Corporation 





1 Page

No Preview Available !





2N6976 fiche technique
Semiconductor
2N6975, 2N6976,
2N6977, 2N6978
April 1995
5A, 400V and 500V N-Channel IGBTs
Features
Package
• 5A, 400V and 500V
• VCE(ON) 2V
• TFI 1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
JEDEC TO-204AA
BOTTOM VIEW
EMITTER
COLLECTOR
(FLANGE)
GATE
• High Input Impedance
Applications
• Power Supplies
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
• Motor Drives
• Protection Circuits
G
Description
The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel
enhancement-mode insulated gate bipolar transistors (IGBTs)
designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
E
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
2N6975
TO-204AA
2N6976
TO-204AA
2N6977
TO-204AA
2N6978
TO-204AA
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified.
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES
Collector-Gate Voltage (RGE = 1M) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VCGR
Reverse Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VCES(REV.)
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGE
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . TJ, TSTG
NOTE:
2N6975/2N6977
(Note 1)
400
400
5
±20
5
10
100
0.8
-55 to +150
1. JEDEC registered value.
2N6976/2N6978
(Note 1)
500
500
5
±20
5
10
100
0.8
-55 to +150
UNITS
V
V
V
V
A
A
W
W/oC
oC
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright © Harris Corporation 1995
3-1
File Number 2297.2

PagesPages 4
Télécharger [ 2N6976 ]


Fiche technique recommandé

No Description détaillée Fabricant
2N697 Diode ( Rectifier ) American Microsemiconductor
American Microsemiconductor
2N697 (2N696 / 2N697) NPN Transistor Microsemi Corporation
Microsemi Corporation
2N697 Bipolar NPN Device Semelab
Semelab
2N697 Trans GP BJT NPN 40V 3-Pin TO-5 New Jersey Semiconductor
New Jersey Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche