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MBR60020CTR fiches techniques PDF

Naina Semiconductor - (MBR60020CT - MBR60040CTR) Schottky Power Diode

Numéro de référence MBR60020CTR
Description (MBR60020CT - MBR60040CTR) Schottky Power Diode
Fabricant Naina Semiconductor 
Logo Naina Semiconductor 





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MBR60020CTR fiche technique
Naina Semiconductor Ltd.
MBR60020CT thru
MBR60040CTR
Features
Silicon Schottky Diode, 600A
Guard Ring Protection
Low forward voltage drop
High surge current capability
Up to 100V VRRM
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR60020CT MBR60030CT
(R) (R)
Repetitive peak
reverse voltage
VRRM
20 30
RMS reverse voltage VRMS
14 21
DC blocking voltage VDC
20 30
Average forward
current
IF(AV)
TC ≤ 100 oC
600
600
Non-repetitive
forward surge
current, half sine-
wave
IFSM
TC = 25 oC
tp = 8.3 ms
4000
http://www.DataSheet4U.net/
4000
MBR60035CT
(R)
35
25
35
600
4000
MBR60040CT
(R)
40
28
40
600
4000
Units
V
V
V
A
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR60020CT
(R)
DC forward voltage
VF
IF = 300 A
TJ = 25 oC
0.75
VR = 20 V
DC reverse current
IR
TJ = 25 oC
VR = 20 V
TJ = 125oC
1
20
MBR60030CT
(R)
0.75
1
20
MBR60035CT
(R)
0.75
1
20
MBR60040CT
(R)
0.75
1
20
Units
V
mA
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
MBR60020CT
(R)
Thermal resistance
junction to case
RthJ-C
0.12
Operating, storage
temperature range
TJ , Tstg
- 40 to +165
MBR60030CT
(R)
0.12
- 40 to +165
MBR60035CT
(R)
0.12
- 40 to +165
MBR60040CT
(R)
0.12
- 40 to +165
Units
oC/W
oC
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/

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